Get Instant Quote for Part Number ROM PROM HEAD 200 with NSN 5962-01-331-7106 by Dla Land And Maritime
| Part Number : ROM PROM HEAD 200 | Manufacturer: Dla Land And Maritime | NSN : 5962-01-331-7106 |
| NIIN : 013317106 | Alternate P/N : ROMPROMHEAD200 | Item Name : microcircuit memory |
| CAGE Code : 16236 | FSC : 5962 Microcircuits Electronic | |
Part number ROM PROM HEAD 200 with NSN 5962013317106, having item name Microcircuit Memory, under FSC 5962 Microcircuits Electronic is available and ready for shipping. Sourced from Dla Land And Maritime, you can easily order ROM PROM HEAD 200 with CAGE Code 16236 at a competitive price. To get a quick quote for this part, fill out the form.
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NSN Information for Part Number ROM PROM HEAD 200 with NSN 5962-01-331-7106, 5962013317106NSN FSC NIIN CLS Hazmat DEMIL Cancelled NSN 5962-01-331-7106
Item Description:Microcircuit Memory
5962 013317106 0 N D CIIC HCC ESD PMIC Criticality ENAC 7 D A 0 Part Number ISC RNVC RNCC HCC MSDS SADC Rom Prom Head 200 5 1 5
Characteristics Data of NSN 5962-01-331-7106, 5962013317106
MRC Criteria Characteristic ABKW OVERALL HEIGHT 0.400 INCHES MAXIMUM ADAQ BODY LENGTH 1.060 INCHES MAXIMUM ADAT BODY WIDTH 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM ADAU BODY HEIGHT 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 1.2 WATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED BIPOLAR AND PROGRAMMABLE AND MONOLITHIC AND BIDIRECTIONAL CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM BIPOLAR METAL-OXIDE SEMICONDUCTOR CQZP INPUT CIRCUIT PATTERN 16 INPUT CTFT CASE OUTLINE SOURCE AND DESIGNATOR D-8 MIL-M-38510 CTQX CURRENT RATING PER CHARACTERISTIC 12.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 5.0 VOLTS NOMINAL POWER SOURCE TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). CQSJ INCLOSURE MATERIAL CERAMIC CZER MEMORY DEVICE TYPE PAL TTQY TERMINAL TYPE AND QUANTITY 20 PRINTED CIRCUIT
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-331-7106 Item Description: Microcircuit Memory | 5962 | 013317106 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Rom Prom Head 200 | 5 | 1 | 5 |
Characteristics Data of NSN 5962-01-331-7106, 5962013317106
| MRC | Criteria | Characteristic |
|---|---|---|
| ABKW | OVERALL HEIGHT | 0.400 INCHES MAXIMUM |
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE AND MONOLITHIC AND BIDIRECTIONAL |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 12.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CZER | MEMORY DEVICE TYPE | PAL |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
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