Get Instant Quote for Part Number AM8155DM-B with NSN 5962-01-228-0135 by Advanced Micro Devices Inc
| Part Number : AM8155DM-B | Manufacturer: Advanced Micro Devices Inc | NSN : 5962-01-228-0135 |
| NIIN : 012280135 | Alternate P/N : AM8155DMB | Item Name : microcircuit memory |
| CAGE Code : 34335 | FSC : 5962 Microcircuits Electronic | |
Part number AM8155DM-B with NSN 5962012280135, having item name Microcircuit Memory, under FSC 5962 Microcircuits Electronic is available and ready for shipping. Sourced from Advanced Micro Devices Inc, you can easily order AM8155DM-B with CAGE Code 34335 at a competitive price. To get a quick quote for this part, fill out the form.
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NSN Information for Part Number AM8155DM-B with NSN 5962-01-228-0135, 5962012280135NSN FSC NIIN CLS Hazmat DEMIL Cancelled NSN 5962-01-228-0135
Item Description:Microcircuit Memory
5962 012280135 0 N B CIIC HCC ESD PMIC Criticality ENAC U B A 0 Part Number ISC RNVC RNCC HCC MSDS SADC Am8155dm-B 3 9 5
Characteristics Data of NSN 5962-01-228-0135, 5962012280135
MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH2 030 INCHES MINIMUM AND 2 080 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 515 INCHES MINIMUM AND 0 600 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING1 5 WATTS MEMORY AFGA OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDHIGH PERFORMANCE AND WENABLE AND WRESET AND HERMETICALLY SEALED MEMORY CQSJ INCLOSURE MATERIALCERAMIC MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN35 INPUT MEMORY CRHL BIT QUANTITY2048 MEMORY CSWJ WORD QUANTITY256 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZER MEMORY DEVICE TYPERAM MEMORY TEST TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC MEMORY TTQY TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-228-0135 Item Description: Microcircuit Memory | 5962 | 012280135 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Am8155dm-B | 3 | 9 | 5 |
Characteristics Data of NSN 5962-01-228-0135, 5962012280135
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH2 030 INCHES MINIMUM AND 2 080 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 515 INCHES MINIMUM AND 0 600 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 5 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHIGH PERFORMANCE AND WENABLE AND WRESET AND HERMETICALLY SEALED |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN35 INPUT |
| MEMORY | CRHL | BIT QUANTITY2048 |
| MEMORY | CSWJ | WORD QUANTITY256 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
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